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TPC8020-H
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (Ultra High-Speed U-MOSIII)
TPC8020-H
High-Speed and High-Efficiency DC-DC Converter Applications Notebook PC Applications Portable Equipment Applications
* * * * * * * Small footprint due to small and thin package High-speed switching Small gate charge: Qg = 23 nC (typ.) Low drain-source ON resistance: R DS (ON) = 6.8 mO (typ.) High forward transfer admittance: |Yfs| =32 S (typ.) Low leakage current: IDSS = 10 A (max) (V DS = 30 V) Enhancement mode: V th = 1.1 to 2.3 V (V DS = 10 V, ID = 1 mA) Unit: mm
Maximum Ratings (Ta = 25C)
Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 k) Gate-source voltage Drain current DC (Note 1) Symbol V DSS V DGR V GSS ID IDP PD Rating 30 30 20 13 52 Unit V V V A
JEDEC JEITA TOSHIBA
? ? 2-6J1B
Pulsed (Note 1) Drain power dissipation (t = 10 s) (Note 2a) Drain power dissipation (t = 10 s) (Note 2b) Single pulse avalanche energy (Note 3) Avalanche current Repetitive avalanche energy (Note 2a) (Note 4) Channel temperature Storage temperature range
Weight: 0.080 g (typ.)
1.9 W
PD EA S IAR EAR Tch Tstg
1.0
W
Circuit Configuration
110 13 0.084 150 -55 to 150
mJ
8 7 6 5
A mJ C C
1 2 3 4
Note 1, Note 2, Note 3 and Note 4: See the next page. This transistor is an electrostatic-sensitive device. Please handle with caution.
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TPC8020-H
Thermal Characteristics
Characteristics Thermal resistance, channel to ambient (t = 10 s) (t = 10 s) (Note 2a) Symbol Rth (ch-a) Max 65.8 Unit C/W
Thermal resistance, channel to ambient (Note 2b)
Rth (ch-a)
125
C/W
Marking (Note 5)
TPC8020 H
Part No. (or abbreviation code) Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish.
Note 1: Ensure that the channel temperature does not exceed 150C.
Note 2: (a) Device mounted on a glass-epoxy board (a)
(b) Device mounted on a glass-epoxy board (b)
FR-4 25.4 x 25.4 x 0.8 (Unit: mm)
FR-4 25.4 x 25.4 x 0.8 (Unit: mm)
(a)
(b)
Note 3: VDD = 24 V, Tch = 25C (initial), L = 0.5 mH, R G = 25 , IAR = 13 A Note 4: Repetitive rating: pulse width limited by max channel temperature Note 5: * on lower left of the marking indicates Pin 1. * Weekly code: (Three digits) Week of manufacture (01 for the first week of a year: sequential number up to 52 or 53) Year of manufacture (The last digit of a year)
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TPC8020-H
Electrical Characteristics (Ta = 25C)
Characteristics Gate leakage current Drain cut-OFF current Drain-source breakdown voltage Gate threshold voltage Drain-source ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn-ON time Switching time Fall time Turn-OFF time Total gate charge (gate-source plus gate-drain) Gate-source charge 1 Gate-drain ("miller") charge Gate switch charge tf toff Qg Qgs1 Qgd QSW V DD 24 V, V GS = 10 V , ID = 13 A - Symbol IGSS IDSS V (BR) DSS V (BR) DSX V th RDS (ON) |Yf s | Ciss Crss Coss tr ton 10 V V GS 0V 4.7 ID = 6.5 A V OUT RL = 2.3 V DS = 10 V , V GS = 0 V , f = 1 MHz Test Condition V GS = 16 V, V DS = 0 V V DS = 30 V, V GS = 0 V ID = 10 mA, V GS = 0 V ID = 10 mA, V GS = -20 V V DS = 10 V, ID = 1 mA V GS = 4.5 V , ID = 6.5 A V GS = 10 V , ID = 6.5 A V DS = 10 V , ID = 6.5 A Min 30 15 1.1 16 Typ. 9.5 6.8 32 1395 140 525 3 9 8 29 23 13 4.5 4.9 6.9 Max 10 10 2.3 13 9 ns nC pF S Unit A A V V m
V DD 15 V - < 1%, tw = 10 s Duty = V DD 24 V, V GS = 10 V , ID = 13 A - V DD 24 V, V GS = 5 V , ID = 13 A -
Source-Drain Ratings and Characteristics (Ta = 25C)
Characteristics Drain reverse current Forward voltage (diode) Pulse (Note 1) Symbol IDRP V DSF Test Condition IDR = 13 A, V GS = 0 V Min Typ. Max 52 -1.2 Unit A V
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TPC8020-H
ID - V DS
10 10 3.5 3.2 4 5 6 8 6 2.9 3.1
COMMON SOURCE Ta = 25C PULSE TEST
ID - V DS
20 10 3.5 3.3 4 4.5 5 3.1 12 6 8 3 8 2.9
COMMON SOURCE Ta = 25C PULSE TEST
DRAIN CURRENT ID (A)
8
DRAIN CURRENT ID (A)
3
16
3.2
4
2.8
2
4
VGS = 2.6V
VGS = 2.7V
0 0
0.2
0.4
0.6
0.8
1
0 0
0.4
0.8
1.2
1.6
2
DRAIN-SOURCE VOLTAGE VDS
(V)
DRAIN-SOURCE VOLTAGE VDS
(V)
ID - V GS DRAIN-SOURCE VOLTAGE V DS (V)
20 COMMON SOURCE 0.2
V DS - V GS
COMMON SOURCE Ta = 25*Z 0.16 PULSE TEST
DRAIN CURRENT ID (A)
16
VDS = 10 V PULSE TEST
12
0.12 ID = 13 A 0.08 6.5 0.04 3.3
8 100 4 25 0 0 Ta = -55C
1
2
3
4
5
6
0 0
2
4
6
8
10
GATE-SOURCE VOLTAGE VGS
(V)
GATE-SOURCE VOLTAGE VGS
(V)
Yf s - ID FORWARD TRANSFER ADMITTANCE Yfs (S)
100 100
RDS (ON) - ID DRAIN-SOURCE ON RESISTANCE RDS (ON) (m)
COMMON SOURCE Ta = 25C PULSE TEST
Ta = -55C 25 10 100
4.5 10
1
VGS = 10 V
COMMON SOURCE VDS = 10 V PULSE TEST 0.1 0.1 1 10 100
1 0.1
1
10
100
DRAIN CURRENT D (A) I
DRAIN CURRENT D (A) I
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TPC8020-H
RDS (ON) - Ta
20 100 COMMON SOURCE PULSE TEST 16 ID = 13A 3.5A,6.5A
IDR - V DS DRAIN REVERSE CURRENT IDR (A)
DRAIN-SOURCE ON RESISTANCE RDS (ON) (m )
10 3 10 4.5 1
12 VGS = 4.5 V 8
4 VGS = 10 V 0 -80
ID = 3.5A,6.5A,13A
COMMON SOURCE Ta = 25C PULSE TEST
VGS = 0 V -0.4 -0.6 -0.8 -1.0
-40
0
40
80
120
160
1 0
-0.2
AMBIENT TEMPERATURE Ta ( C)
DRAIN-SOURCE VOLTAGE VDS (V)
CAPACITANCE - V DS
10000 2.5
V th - Ta
GATE THRESHOLD VOLTAGE Vth (V)
CAPACITANCE C (pF)
Ciss 1000 Coss
2
1.5
1 COMMON SOURCE VDS = 10 V 0.5 ID = 1 mA PULSE TEST 0 -80 -40 0 40 80 120 160
100
COMMON \*[X SOURCE *U'n VGS== 0 V VGS 0 V f = 1 MHz f = 1 MHz Ta = 25C Ta = 25C
Crss
10 0.1
1
10
100
DRAIN-SOURCE VOLTAGE VDS (V)
AMBIENT TEMPERATURE Ta ( C)
PD - Ta
2 (1)
DYNAMIC INPUT / OUTPUT CHARACTERISTICS
COMMON SOURCE
DRAIN POWER DISSIPATION PD (W)
(1)Device mounted on a glass-epoxy board(a) (Note 2a) (2)Device mounted on a glass-epoxy board(b) (Note 2b) "**10s
DRAIN POWER DISSIPATION PD (W)
1.6
ID = 13 A 40 Ta = 25C PULSE TEST 30 VDS 24 V 20 12 V VDD = 6 V
16
1.2 (2) 0.8
12
8
0.4
10 VGS 0
4
0 0
40
80
120
160
0
8
16
24
32
0 40
AMBIENT TEMPERATURE Ta ( C)
TOTAL GATE CHARGE Qg (nC)
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DRAIN-SOURCE VOLTAGE VDS (V)
50
20
TPC8020-H
r th - tw TRANSIENT THERMAL IMPEDANCE r th (*Z /W)
1000 (1) Device mounted on a glass-epoxy board (a) (Note 2a) (2) Device mounted on a glass-epoxy board (b) 100 (Note 2b) (1) (2)
10
1 SINGLE PULSE 0.1 0.001
0.01
0.1
1
10
100
1000
PULSE WIDTH tw (s)
SAFE OPERATING AREA
100
DRAIN CURRENT ID (A)
ID max ( PULSED) * t=1ms 10 t=10ms
*|SINGLE NONREPETITIVE PULSE 1
Tc=25*Z CURVES LINEARLY MUST WITH BE DERATED IN
INCREASE
TEMPERATURE.
VDSS max 0.1 0.1 1 10 100
DRAIN-SOURCE VOLTAGE VDS (V)
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TPC8020-H
RESTRICTIONS ON PRODUCT USE
* The information contained herein is subject to change without notice.
030619EAA
* The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. * TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system , and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc.. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer's own risk. * TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations.
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